Mémoires de Fin d’Etudes
Etablissement
Université de Boumerdès - M’hamed Bougara
Affiliation
Département Electrique
Auteur
ACHOUR, Ahmed
Directeur de thèse
Refoufi Larbi (Professeur)
Filière
Génie Electrique
Diplôme
Magister
Titre
Modeling and simulation of GTO switching characteristics
Mots clés
Semiconducteurs de puissance ; Power semiconductors ; Simulation, méthodes de ; Simulation methods
Résumé
This work presents a high power gate turn off thyristor (GTO) model based on a one-port negative differential resistance (NDR) circuit. the basic one-cell model of an elementary GTO consists of two complementary bipolar junction transistors connected in a feedback configuration and three linear resistors (2t-3r). the static and dynamic responses of the model are simulated using the SPICE software program.the 2t-3r- circuit model is found to satisfactorily describe the GTO switching characteristics but falls short to predict the tail current transient effect...
Date de soutenance
2000
Cote
TH 166
Pagination
110 p.
Illusatration
ill.
Statut
Traitée