Etablissement
Ecole nationale polytechnique d'Oran -Maurice Audin
Affiliation
Département de Génie Electrique
Auteur
BENYAHIA, M
Directeur de thèse
M.BOUSLAMA
Co-directeur
A.TEMMAR
Filière
Electronique
Diplôme
Magister
Titre
ÉTUDE ET COMPARAISON DES CIRCUITS EN TECHNOLOGIE CMOS ET BiCMOS
Mots clés
COMPARAISON CIRCUITS TECHNOLOGIE CMOS ET BiCMOS
Résumé
Complementary MOS offers an inverter with near-perfect characteristics such as high, input and low output impedance, high gain in the transition region, high packing density, and low power dissipation. Speed is the only restricting factor, especially when large capacitors must be driven .In contrast, the bipolar gate has a current drive per unit area ,and high switching speed. In recent year s improved technology has made it possible to combine complementary MOS transistors and bipolar devices in a single process at a reasonable cost. This technology opens a wealth of new opportunities, because it is now possible to combine the high –densite integration of MOS logic with the current-driving capabilities of bipolar transistors .A BICMOS inventer, which achives just that is discussed in this work. We made a comparative study of technology according to the influence from the load capacity, the width of channel, the supply voltage the operating temperature and power consumption.
Date de soutenance
22/10/2003
Cote
TH/04/107
Pagination
64
Format
21/30
Statut
Soutenue